| Autor: |
Häusermann, Roger, Chauvin, Sophie, Facchetti, Antonio, Chen, Zhihua, Takeya, Jun, Batlogg, Bertram |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 4p, 1 Diagram, 1 Chart, 2 Graphs |
| Abstrakt: |
The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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