| Autor: |
Olikh, O. Ya., Gorb, A. M., Chupryna, R. G., Pristay-Fenenkov, O. V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 12p, 1 Diagram, 6 Charts, 10 Graphs |
| Abstrakt: |
The influence of ultrasound on current–voltage characteristics of non-irradiated silicon n+–p structures as well as silicon structures exposed to reactor neutrons or 60Co gamma radiation has been investigated experimentally. It has been found that the ultrasound loading of the n+–p structure leads to the reversible change of shunt resistance, carrier lifetime, and ideality factor. Specifically, considerable acoustically induced alteration of the ideality factor and the space charge region lifetime was observed in the irradiated samples. The experimental results were described by using the models of coupled defect level recombination, Shockley–Read–Hall recombination, and dislocation-induced impedance. The experimentally observed phenomena are associated with the increase in the distance between coupled defects as well as the extension of the carrier capture coefficient of complex point defects and dislocations. It has been shown that divacancies and vacancy–interstitial oxygen pairs are effectively modified by ultrasound in contrast to interstitial carbon–interstitial oxygen complexes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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