CONDUCTIVITY OSCILLATIONS DURING FORMATION OF DISORDERED 2D Yb LAYERS ON Si(111).

Autor:	GALKIN, N. G., DOTSENKO, S. A., GOROSHKO, D. L., GOURALNIK, S. A., BOULATOV, A. N.
Předmět:	OSCILLATIONS INTERFACES (Physical sciences) HALL effect SEMICONDUCTOR quantum dots SILICIDES METALLIC films
Zdroj:	Physics, Chemistry & Application of Nanostructures: Reviews & Short Notes To Nanomeeting 2003; 2003, p206-209, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu