P-TYPE ZNO: AS OBTAINED BY ION IMPLANTATION OF AS+ WITH POST-IMPLANTATION ANNEALING IN OXYGEN RADICALS.

Autor:	GEORGOBIANI, A. N., DEMIN, V. I., KOTLYAREVSKY, M. B., ROGOZIN, I. V., MARAKHOVSKY, A. V.
Předmět:	ZINC oxide P-type semiconductors ION implantation ANNEALING of crystals REACTIVE oxygen species
Zdroj:	Astroparticle, Particle & Space Physics, Detectors & Medical Physics Applications - Proceedings of the 8th Conference; 2004, p467-472, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu