RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON FOR THE FORMATION OF ULTRA SHALLOW N+P JUNCTIONS.

Autor:	GEORGOULAS, N., GIRGINOUDI, D., MITSINAKIS, A., KOTSANI, M., THANAILAKIS, A.
Předmět:	ANNEALING of metals ACTIVATION energy CHEMICAL kinetics SILICON carbide CARBIDES
Zdroj:	Microelectronics, Microsystems & Nanotechnology: Papers Presented of At Mmn 2000; 2001, p119-122, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu