GATE LEAKAGE CURRENT NOISE IN ULTRA-THIN GATE OXIDE MOSFET'S.

Autor:	LEE, J. H., BOSMAN, G., GREEN, K. R., LADWIG, D.
Předmět:	CURRENT noise (Electricity) STRAY currents METAL oxide semiconductor field-effect transistors LOW voltage systems ENERGY dissipation
Zdroj:	Noise in Physical Systems & 1/F Fluctuations: Icnf 2001, Procs of the 16th Intl Conf; 2001, p165-168, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu