ELECTRON-PHONON COUPLING IN A DELTA-DOPED n-i-p STRUCTURE IN GaAs.

Autor:	HENNING, J. C. M., DE GROOTE, F. P. J., VAN DER VLEUTEN, W. C., WOLTER, J. H.
Předmět:	GALLIUM arsenide semiconductors SEMICONDUCTOR doping ELECTRON-phonon interactions DOPING agents (Chemistry) PHOTOLUMINESCENCE
Zdroj:	Shallow-Level Centers in Semiconductors - Proceedings of the 7th International Conference; 1997, p269-272, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu