| Autor: |
Fitsilis, Michael, Kohlstedt, Hermann, Waser, Rainer, Ullmann, Marc |
| Předmět: |
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| Zdroj: |
Integrated Ferroelectrics; 2004, Vol. 60 Issue 1, p45-58, 14p |
| Abstrakt: |
A new concept for using a ferroelectric field effect transistor in a memory configuration is presented without the requirement of a negative voltage or an erase operation. The transistor is designed so that the accumulation sets in at a lower gate source voltage making it possible to reverse the polarization without applying a negative pulse to the gate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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