ELECTRICAL AND OPTICAL PROPERTIES OF AlGaN/GaN HEMT STRUCTURES WITH 2-DIMENSIONAL ELECTRON GAS GROWN BY MOCVD ON SAPPHIRE AND Si (111) SUBSTRATES.

Autor:	GURSKII, A. L., LUTSENKO, E. V., PAVLOVSKII, V. N., ZUBIALEVICH, V. Z., DANIL'CHIK, A. V., OSIPOV, K. A., YABLONSKII, G. P., SHULENKOV, A. S., HRYSHANAU, V. A., STOGNIJ, A. I., KALISCH, H., DIKME, Y., FIEGER, M., SZYMAKOWSKI, A., JANSEN, R. H., SCHINELLER, B., HEUKEN, M.
Předmět:	ELECTRON gas ELECTRICAL conductivity measurement SAPPHIRES ELECTRON mobility REFLECTANCE spectroscopy
Zdroj:	Physics, Chemistry & Application of Nanostructures - Reviews & Short Notes To Nanomeeting-2005; 2005, p539-543, 5p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu