Autor: |
Chakraborty, Deblina, Nandi, Upendranath, Dey, Animesh Kumar, Dasgupta, Papri, Poddar, Asok, Jana, Debnarayan |
Předmět: |
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Zdroj: |
Physica Status Solidi (B); Apr2018, Vol. 255 Issue 4, p1-1, 9p |
Abstrakt: |
The effect of annealing temperatures on the structural and the electrical transport properties of La2NiMnO6 nanoparticles is investigated in detail. The grain size, grain boundary and the antisite disorder (ASD) are affected by the annealing temperature during the preparative conditions of annealing. The HRTEM image indicates that the average grain size increases with annealing temperature providing a platform for explanation of the transport data. Both I − V and d I d V − V measurements show that the electrical conduction is non‐Ohmic and characterized by a voltage V 0 ( A T ), known as the onset voltage, which scales with the Ohmic conductance Σ 0 ( A T ) as V 0 ( A T ) ∼ Σ 0 ( T ) x A T, x A T being the onset exponent having negative values in both cases. A T refers to the fact that Σ 0 ( A T ) is changed by the annealing temperature (AT). V 0 ( A T ) depends strongly on the grain size and grain boundaries and decreases with the increase in annealing temperature. The negative value of x A T is physically understood from the concept of inter‐granular tunneling effect. This non‐Ohmic conduction, onset voltage V 0 ( A T ) and onset exponent x A T are qualitatively explained by considering the conduction through both the ordered and disordered regions and by applying Glazman–Matveev model. The transport data are systematically analyzed within the framework of scaling formalism. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
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