| Autor: |
Luo, Zhipeng, Pei, Ling, Li, Meiya, Zhu, Yongdan, Xie, Shuai, Cheng, Xiangyang, Liu, Jiaxian, Ding, Huaqi, Xiong, Rui |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/9/2018, Vol. 112 Issue 15, pN.PAG-N.PAG, 4p, 1 Diagram, 3 Graphs |
| Abstrakt: |
A Co0.03Zn0.97O (CZO) thin film was epitaxially grown on a Nb doped (001) SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition to form a Pt/CZO/NSTO heterostructure. This device exhibits stable bipolar resistive switching, well retention and endurance, multilevel memories, and a resistance ratio of high resistance state (HRS)/low resistance state (LRS) up to 7 × 105. Under the illumination of a 405 nm laser, the HRS of the device showed distinct photoelectricity with an open-circuit voltage of 0.5 V. A stronger ferromagnetism was observed at the HRS than at the LRS. The above phenomenon is attributable to the accumulation and migration of oxygen vacancies at the interface of CZO/NSTO. Our results demonstrated a pathway towards making multifunctional devices that simultaneously exhibit resistive switching, photoelectricity, and ferromagnetism. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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