| Autor: |
Sun, Pengpeng, Liu, Hui, Geng, Miao, Zhang, Rong, Yuan, Tingting, Luo, Wei Jun |
| Předmět: |
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| Zdroj: |
Microelectronics International; 2018, Vol. 35 Issue 2, p92-96, 5p |
| Abstrakt: |
Purpose The design and performance of X-band high power 3-bit phase shifter which has been fabricated in 0.25µm GaN HEMT technology are presented.Design/methodology/approach Each bit of this phase shifter design is based on high-pass/low-pass topology.Findings For all eight states, the insertion loss is 12.5 ± 2.5 dB from 8-10 GHz and the input return loss is better than 9 dB over 8-10 GHz. The 3-bit phase shifter achieves a RMS phase error of 1o at 8.5 GHz and a RMS amplitude error less than 1.1dB. The measured continuous wave power data demonstrates typical input RF power handing capability of 32 dBm at 8 GHz.Originality/value This is to the authors’ knowledge the first published results of 3-bit AlGaN/GaN phase shifter. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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