| Autor: |
Buyalo, M. S., Gadzhiyev, I. M., Il'inskaya, N. D., Usikova, A. A., Novikov, I. I., Karachinsky, L. Ya., Kolodeznyi, E. S., Bougrov, V. E., Egorov, A. Yu., Portnoi, E. L. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Feb2018, Vol. 44 Issue 2, p174-177, 4p |
| Abstrakt: |
We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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