| Autor: |
Chung-I Yang, Wu-Ching Chou, Ting-Chang Chang, Po-Yung Liao, Guan-Fu Chen, Hsi-Wen Liu, Yu-Shan Lin, Ying-Hsin Lu, Bo-Wei Chen, Shin-Ping Huang, Yu-Zhe Zheng, Yu-Xuan Wang, Chien-Yu Lin, Shengdong Zhang |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Feb2018, Vol. 65 Issue 2, p533-536, 4p |
| Abstrakt: |
This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal gate are investigated. In devices with shorter metal gate lengths, an abnormal rise in capacitanceat the off-state in capacitance--voltage ( C-V) characteristic curves can be observed. This can be attributed to the stronger electric field induced by the edge of themetal gate under bias sweepwhen themetal gate length is shorter than the IGZO layer length. Light illumination measurements indicate a negative shift in threshold voltage and an increase in subthreshold-leakage current regardless of relative metal gate length. Moreover, negative threshold voltage shift becomes more severe with a more obvious hump in C-V characteristic curves under backlight illumination of a shorter width device, a phenomenon which has been verified by simulation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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