| Autor: |
Dyuzhev, N. A., Gusev, E. E., Gryazneva, T. A., Dedkova, A. A., Dronova, D. A., Kireev, V. Yu., Kirilenko, E. P., Migunov, D. M., Novikov, D. V., Patyukov, N. N., Presnukhina, A. A., Bakun, A. D., Ermakov, D. S. |
| Zdroj: |
Nanotechnologies in Russia; Jul2017, Vol. 12 Issue 7/8, p426-437, 12p |
| Abstrakt: |
The technology of forming blanks of nanostructured membranes for MEMS devices based on alternating Si3N4/SiO2 layers with a nanometer thickness has been developed. A comprehensive study of the structure and composition of membranes using microanalysis methods based on spectroscopic ellipsometry, scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), probe profilometry, and X-ray diffractometry is performed. The mechanical stress in silicon wafers with blanks of nanostructured membranes is experimentally determined. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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