Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness.
| Autor: | Daniel Nagy, Manuel Aldegunde, Muhammad A Elmessary, Antonio J García-Loureiro, Natalia Seoane, Karol Kalna |
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| Zdroj: | Journal of Physics: Condensed Matter; 4/11/2018, Vol. 30 Issue 14, p1-1, 1p |
| Databáze: | Complementary Index |
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