Activation of dopant in silicon by ion implantation under heating sample at 200 °C.

Autor: Sameshima, Toshiyuki, Yasuta, Keisuke, Hasumi, Masahiko, Nagao, Tomokazu, Inouchi, Yutaka
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Zdroj: Applied Physics A: Materials Science & Processing; Mar2018, Vol. 124 Issue 3, p1-1, 1p, 8 Graphs
Abstrakt: Activation and carrier generation are reported in the case of phosphorus implantation with a dose of 2.0 × 1015 cm−2 at 70 keV to crystalline silicon substrates under heating ranging from 200 to 500 °C. The analysis of the optical reflectivity spectra of implanted surfaces revealed that the effective amorphized thickness was low of 2.9 nm in the case of 200 °C-phosphorus implantation, while it was large of 140 nm for implantation at room temperature. The carrier density par unit area increased from 6.9 × 1013 to 4.8 × 1014 cm−2 and the photo-induced minority carrier effective lifetime increased from 2.2 × 10−6 to 1.6 × 10−4 s as the implantation temperature increased from 200 to 500 °C. Defect reduction with 1.3 MPa H2O vapor heating at 250 °C for 3 h increased the carrier density par unit area of the 200 °C-phosphorus-implanted sample to 2.7 × 1014 cm−2. The rectified characteristics were obtained by current-voltage measurement in the case of phosphorus implantation to p-type silicon substrate. Photovoltaic effect was also observed. These results show that the ion implantation under low temperature heating has a capability of p-n junction formation. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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