| Autor: |
Saikia, Dhrubajyoti, Sarma, Ranjit |
| Zdroj: |
Indian Journal of Physics; Mar2018, Vol. 92 Issue 3, p307-313, 7p |
| Abstrakt: |
The influence of thin layer of nickel oxide (NiO) over the fluorine-doped tin oxide (FTO) surface on the performance of Organic light-emitting diode (OLED) is reported. With an optimal thickness of NiO (10 nm), the luminance efficiency is found to be increased as compared to the single FTO OLED. The performance of OLED is studied by depositing NiO films at different thicknesses on the FTO surface and analyzed their J–V and L–V characteristics. Further analysis is carried out by measuring sheet resistance and optical transmittance. The surface morphology is studied with the help of FE-SEM images. Our results indicate that NiO (10 nm) buffer layer is an excellent choice to increase the efficiency of FTO based OLED devices within the charge tunneling region. The maximum value of current efficiency is found to be 7.32 Cd/A. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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