| Autor: |
Hebali, Mourad, Berbara, Djilali, Benzohra, Mohammed, Chalabi, Djilali, Saïdane, Abdelkader, Bey, Abdelkader Baghdad |
| Předmět: |
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| Zdroj: |
Journal of Engineering Science & Technology Review; 2017, Vol. 10 Issue 5, p195-198, 4p |
| Abstrakt: |
Silicon carbide is a very interesting semiconductor for applications in high temperature, high frequency and high power. In this article, we have studied and compared MOS transistors with 130nm silicon carbide (3C-SiC, 4H-SiC and 6H-SiC) technologies using BSIM3v3 model. To perform this work we have used PSpice to study the characteristics I(V) and the transconductance gm as a function of temperature in the range -200° C to 750° C with a supply voltage VDS = 1.2V. We have also calculated the transition frequencies fT of the three types of transistors. Our results show that the (3C, 4H and 6H)-SiC transistors operate under a low voltage, low power, high temperature and high frequency in submicron dimension. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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