| Autor: |
Mansurov, B. Z., Kenzhegulov, А. K., Medyanova, B. S., Partizan, G., Suyundykova, G. S., Zhumadilov, B., Mansurova, M. E., Koztayeva, U. P., Aliyev, B. А. |
| Předmět: |
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| Zdroj: |
Eurasian Chemico-Technological Journal; 2017, Vol. 19 Issue 2, p169-175, 7p, 1 Black and White Photograph, 1 Chart, 5 Graphs |
| Abstrakt: |
The results of experiments on the synthesis of SiC and C nanostructures by chemical vapor deposition in microwave plasma are presented in this article. The single crystal silicon plates with orientations [100] and [111] which previously passed chemical purification were used as substrates. Also, the substrates of porous silicon were prepared in order to activate the surface during the synthesis. The synthesis temperature ranged from 700 to 900 °C in steps of 100 °C. The pressure in the chamber was changed depending on the power of the plasma. Studies by scanning electron microscopy (SEM) showed that formed nanostructures have a diameter of 200‒350 nm and a rough surface. The formation of nanostructures on the polished Si occurs on the SiC buffer layer. Analysis of SEM images of the samples shows that growth of NS on the surface of porous silicon is more widespread in contrast to the polished Si. The results of X-Ray spectral microanalysis showed that the carbon content in samples of nanostructures on polished Si varies from 10 to 20% and remains constant on porous silicon ~ 25%. The results of studies by Raman scattering confirmed that SiC film with structure of 3C-SiC is formed on the polished Si. Besides, the presence of main carbon peaks on both types of substrates in the range of 1338.2 and 1583 cm‒1 should be noted, which correspond to the carbon nanostructures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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