Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs.

Autor: Gnana Prakash, A. P., Pradeep, T. M., Hegde, Vinayakprasanna N., Pushpa, N., Bajpai, P. K., Patel, S. P., Trivedi, Tarkeshwar, Bhushan, K. G.
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Zdroj: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena; Nov-Dec2017, Vol. 172 Issue 11/12, p952-963, 12p
Abstrakt: NPN transistors and N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 5 MeV protons and60Co gamma radiation in the dose ranging from 1 Mrad(Si) to 100 Mrad(Si). The different electrical characteristics of the NPN transistor such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied as a function of total dose. The different electrical characteristics of N-channel MOSFETs such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (µ) and drain saturation current (IDSat) were studied systematically before and after irradiation in the same dose ranges. A considerable increase in the base current (IB) and decrease in the hFE, gmand collector saturation current (ICSat) were observed after irradiation in the case of the NPN transistor. In the N-channel MOSFETs, the ΔNitand ΔNotwere found to increase and Vth, gm, µ and IDSatwere found to decrease with increase in the radiation dose. The 5 MeV proton irradiation results of both the NPN transistor and N-channel MOSFETs were compared with60Co gamma-irradiated devices in the same dose ranges. It was observed that the degradation in 5 MeV proton-irradiated devices is more when compared with the60Co gamma-irradiated devices at higher total doses. [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index
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