| Autor: |
Peterson, George Glenn, Su, Qing, Wang, Yongqiang, Ianno, Natale J., Dowben, Peter A., Nastasi, Michael |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan/Feb2018, Vol. 36 Issue 1, p1-N.PAG, 6p |
| Abstrakt: |
The impact of neutron irradiation, in the energy range of ~0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7 x 108 to 1.08 x 109 neutrons/cm². [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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