| Autor: |
Zonensain, Oren, Fadida, Sivan, Fisher, Ilanit, Gao, Juwen, Danek, Michal, Eizenberg, Moshe |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2018, Vol. 123 Issue 3, p035101-1-N.PAG, 6p, 2 Black and White Photographs, 5 Graphs |
| Abstrakt: |
This study is a thorough investigation of the chemical, structural, and electrical stability of W based organo-metallic films, grown by atomic layer deposition, for future use as gate electrodes in advanced metal oxide semiconductor structures. In an earlier work, we have shown that high effective work-function (4.7 eV) was produced by nitrogen enriched films (WCxNy) dominated by W-N chemical bonding, and low effective work-function (4.2 eV) was produced by hydrogen plasma resulting in WCx films dominated by W-C chemical bonding. In the current work, we observe, using x-ray diffraction analysis, phase transformation of the tungsten carbide and tungsten nitride phases after 900oC annealing to the cubic tungsten phase. Nitrogen diffusion is also observed and is analyzed with time-of-flight secondary ion mass spectroscopy. After this 900oC anneal, WCxNy effective work function tunability is lost and effective work-function values of 4.7–4.8 eV are measured, similar to stable effective work function values measured for PVD TiN up to 900oC anneal. All the observed changes after annealing are discussed and correlated to the observed change in the effective work function. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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