| Autor: |
Jaiswal, Piyush, Ul Muazzam, Usman, Pratiyush, Anamika Singh, Mohan, Nagaboopathy, Raghavan, Srinivasan, Muralidharan, R., Shivashankar, S. A., Nath, Digbijoy N. |
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| Zdroj: |
Applied Physics Letters; 1/15/2018, Vol. 112 Issue 2, p1-N.PAG, 5p |
| Abstrakt: |
We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at<200°C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline β-Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4-5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the β-Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of β-Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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