| Autor: |
Haffner, Thibault, Zeghouane, Mohammed, Bassani, Franck, Gentile, Pascal, Gassenq, Alban, Chouchane, Fares, Pauc, Nicolas, Martinez, Eugenie, Robin, Eric, David, Sylvain, Baron, Thierry, Salem, Bassem |
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| Zdroj: |
Physica Status Solidi. A: Applications & Materials Science; Jan2018, Vol. 215 Issue 1, p1-1, 5p |
| Abstrakt: |
In this work we report on the elaboration and characterization of Ge1−xSnx nanowires synthetized by chemical vapor deposition (CVD) via vapor–liquid–solid (VLS) mechanism using GeH4 and SnCl4 as precursors. We have investigated tin incorporation in Ge as a function of experimental growth conditions such as growth temperature and Sn precursor partial pressure (PSnCl4/PGeH4 ratio). We have demonstrated Ge1−xSnx nanowires with Sn incorporation around 1 at.% in the core with a thin Sn‐rich shell with up to 10 at.% Sn well beyond the equilibrium solubility of Sn in bulk Ge. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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