| Autor: |
Figueiredo, Pedro M., Vital, Jo&acaron;o C. |
| Zdroj: |
IEEE Transactions on Circuits & Systems. Part II: Express Briefs; Mar2004, Vol. 51 Issue 3, p111-115, 5p |
| Abstrakt: |
This article shows that changing the inversion level of a MOS transistor allows voltage amplification. The theoretical characterization of this amplifier in terms of gain and harmonic distortion is made in the article, and comparisons with HSPICE results are performed. Finally, some practical considerations to improve the performance of the circuit are presented. The voltage at the terminals of a capacitor is inversely proportional to its capacitance value, so if there is a way of decreasing the capacitance, while maintaining the charge, the voltage will increase. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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