| Autor: |
Bennett, S. P., Baldwin, J. W., Staruch, M., Matis, B. R., LaComb, J., van't Erve, O. M. J., Bussmann, K., Metzler, M., Gottron, N., Zappone, W., LaComb, R., Finkel, P. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/18/2017, Vol. 111 Issue 25, p1-5, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Magnetoelectric (ME) cantilever resonators have been successfully employed as magnetic sensors to measure low magnetic fields; however, high relative resolution enabling magnetometry in high magnetic fields is lacking. Here, we present on-chip silicon based ME microelectromechanical (MEMS) doubly clamped resonators which can be utilized as high sensitivity, low power magnetic sensors. The resonator is a fully suspended thin film ME heterostructure composed of an active magnetoelastic layer (Fe0.3Co0.7), which is strain coupled to a piezoelectric signal/excitation layer (AlN). By controlling uniaxial stress arising from the large magnetoelastic properties of magnetostrictive FeCo, a magnetically driven shift of the resonance frequency of the first fundamental flexural mode is observed. The theoretical intrinsic magnetic noise floor of such sensors reaches a minimum value of 35 pT/√Hz. This approach shows a magnetic field sensitivity of ~5 Hz/mT in a bias magnetic field of up to 120 mT. Such sensors have the potential in applications required for enhanced dynamic sensitivity in high-field magnetometry. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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