| Abstrakt: |
Pulsed-discharge plasmas offer great advantages in deposition of silicon-based films due to the fact that they can suppress cluster agglomeration, moderate the energy of bombarding ions and prolong the specie's diffusion time on the substrate. In this work, a one-dimensional fluid/Monte-Carlo hybrid model is applied to study pulse modulated radio-frequency (RF) plasmas sustained in capacitively coupled Ar and SiH4/Ar discharges. First, the electron energy distributions in pulsed Ar and SiH4/Ar plasmas have been investigated and compared under identical discharge-circuit conditions. The electron energy distribution function (EEDF) in Ar discharge exhibits a familiar bi- Maxwellian shape during the power-on phase of the pulse, while a more complex (resembling a multi-Maxwellian) distribution with extra inflection points at lower energies is observed in the case of the SiH4/Ar mixture. These features become more prominent with the increasing fraction of SiH4 in the gas mixture. The difference in the shape of the EEDF (which is pronounced inside the plasma but not in the RF sheath where electron heating occurs) is mainly attributed to the electronimpact excitations of SiH4. During the power-off phase of the pulse, the EEDFs in both Ar and SiH4/Ar discharges evolve into bi-Maxwellian shapes, with shrinking high energy tails. Furthermore, the parameter of ion species in the case of SiH4/Ar discharge is strongly modulated by pulsing. For positive ions, such as SiH+3 and Si2H+4 , the particle fluxes overshoot at the beginning of the power-on interval. Meanwhile, for negative ions such as SiH-2 and SiH-3, density profiles observed between the electrodes are saddle-shaped due to the repulsion by the self-bias electric field as it builds up. During the power-off phase, the wall fluxes of SiH-2 and SiH-3 gradually increase, leading to a significant decrease in the net surface charge density on the driven electrode. Compared with ions, the density of SiH3 is poorly modulated by pulsed power and is nearly constant over the entire modulation period, but the density of SiH2 shows a detectable decline in the afterglow. However, because of a much smaller content of SiH2, the deposition rate hardly shows any variation under the selected waveform of the pulse. [ABSTRACT FROM AUTHOR] |
