| Autor: |
Dong-Hwan Kim, Su-Keun Eom, Jun-Seok Jeong, Jae-Gil Lee, Kwang-Seok Seo, Ho-Young Cha |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Nov2017, Vol. 35 Issue 6, p1-5, 5p |
| Abstrakt: |
The effect that insertion gate metals have on GaN millimeter-wave devices undergoing a postmetallization annealing (PMA) process was investigated. It was found that the PMA process increases the gate resistance (Rg), which is responsible for a decrease in the maximum oscillation frequency (fmax). The resistance was examined as a function of line patterns containing various gate metal stacks, including Ni/Au and Ni/Mo/Au, before and after annealing from a low temperature to 550 °C. The metal stack with an Mo insertion layer effectively suppressed Au diffusion into GaN and reduced the increase in the gate metal resistance. For the fabricated AlGaN/GaN-on-Si high-electron-mobility transistors with a Ni/Mo/Au gate, stable gate reliability, improved current collapse characteristics, and small-signal characteristics were also achieved compared to those of the Ni/Au gate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
