Development of Process Recipes for Maximum Mask Etch Selectivity and Maximum Etch Rate Having Vertical Sidewalls for Deep, Highly-Anisotropic Inductively-Coupled Plasma (ICP) Etching of Fused Silica.
| Autor: | Pedersen, Michael, Huff, Michael |
|---|---|
| Zdroj: | ECS Journal of Solid State Science & Technology; 2017, Vol. 6 Issue 9, pP644-P652, 9p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|