| Autor: |
Morozov, S. V., Rumyantsev, V. V., Fadeev, M. A., Zholudev, M. S., Kudryavtsev, K. E., Antonov, A. V., Kadykov, A. M., Dubinov, A. A., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/6/2017, Vol. 111 Issue 19, p192101-1-192101-5, 5p, 2 Charts, 3 Graphs |
| Abstrakt: |
We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide-gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20–50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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