| Autor: |
Tsu-Chi Chang, Shiou-Yi Kuo, Jhen-Ting Lian, Kuo-Bin Hong, Shing-Chung Wang, Tien-Chang Lu |
| Zdroj: |
Applied Physics Express; Nov2017, Vol. 10 Issue 11, p1-1, 1p |
| Abstrakt: |
We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) capable of high-temperature operation. The GaN-based VCSELs include double dielectric distributed Bragg reflectors and epitaxially grown p–i–n InGaN multiple-quantum-well active layers initially deposited on c-plane sapphire substrates that are bonded to a silicon substrate with a p-side-down and patterned mirror configuration, allowing effective heat dissipation. GaN-based VCSELs with an emission aperture 10 µm in diameter were fabricated, and their temperature-dependent lasing characteristics revealed that the VCSELs can endure 350 K, as measured under quasicontinuous-wave operation conditions. The temperature-dependent lasing wavelength shift occurs at a rate of dλFP/dT ≈ 0.012 nm/K. The high-temperature operation of GaN-based VCSELs was attributed to the well-matched gain-mode offset, the p-side-down configuration, and the reduced lateral size of the bottom distributed Bragg reflector with recessed metal. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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