| Autor: |
Picken, C. J., Legaie, R., Pritchard, J. D. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/16/2017, Vol. 111 Issue 16, p164102-1-164102-5, 5p, 1 Color Photograph, 2 Charts, 3 Graphs |
| Abstrakt: |
Single atom imaging requires discrimination of weak photon count events above the background and has typically been performed using electron-multiplying charge-coupled device cameras, photomultiplier tubes, or single photon counting modules. A scientific complementary metal-oxide semiconductor (sCMOS) provides a cost effective and highly scalable alternative to other single atom imaging technologies, offering fast readout and larger sensor dimensions. We demonstrate single atom resolved imaging of two site-addressable optical traps separated by 10 μm using an sCMOS camera, offering a competitive signal-to-noise ratio at intermediate count rates to allow high fidelity readout discrimination (error<10-6) and sub-μm spatial resolution for applications in quantum technologies. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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