| Autor: |
Abbas, Tariq, Kakil, Shaida, Slewa, Lary |
| Předmět: |
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| Zdroj: |
Journal of Materials Science: Materials in Electronics; Nov2017, Vol. 28 Issue 21, p16086-16093, 8p |
| Abstrakt: |
Nickel oxide (NiO) thin films have been prepared by spray pyrolysis on quartz substrate and p-type silicon wafer, used to fabricate single layer device (Au/NiO/Au) and heterojunction device (Au/NiO/Si/Au) as a gas sensors. The structural, morphological, and optical properties of these films were investigated. The prepared films had mesoporous NiO phase with the average pore size in the range 100-500 nm. The nanostructure NiO films exhibited sensitivity with H and O target gases at room temperature. Current-voltage (I-V) characteristics of the fabricated single layer devices were studied at room temperatures in vacuum and Ohmic-like behavior was observed, while in the case of Au/p-NiO/p-Si/Au heterojunction Schottky behavior was observed. The p-NiO/p-Si heterojunction sample exhibited an excellent gas sensing response to O gas at room temperature and the light illumination improved the responsivity of both devices. The responsivity for the p-NiO/p-Si heterojunction at room temperature measured at an applied bias voltage of 5 V was found to be 108% for O gas and 82% for H gas compared with single layer device Au/NiO/Au 86% for O and 96% for H respectively. These results suggest that the nanostructure NiO films are promising for gas sensor applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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