Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length.

Autor:	Tiwari, Durgesh Laxman, Sivasankaran, K.
Předmět:	GRAPHENE FIELD-effect transistors ENCAPSULATION (Catalysis) SUBSTRATES (Materials science) NANOSTRUCTURED materials COMPUTER simulation
Zdroj:	International Journal of Nanoscience; Feb-Apr2018, Vol. 17 Issue 1/2, p-1, 4p
Abstrakt:	This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95m and 5nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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