| Autor: |
Teraji, T., Fiori, A., Kiritani, N., Tanimoto, S., Gheeraert, E., Koide, Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/7/2017, Vol. 122 Issue 13, p1-8, 8p, 2 Diagrams, 1 Chart, 9 Graphs |
| Abstrakt: |
Current transport at p-diamond Schottky contacts under reverse bias operation was investigated. Reverse current transport modes of several types were observed depending on the bias voltage range: thermionic emission (TE) associated with the image force barrier lowering was dominant in the lower voltage range of <50 V, whereas thermionic-field emission (TFE) mechanism governed transport in the higher voltage range. The Schottky barrier height ∅b estimated from the reverse characteristics was lower than that obtained from the forward characteristic by more than 0.4 eV, which indicates that the low Schottky barrier height ∅b low area localized in the patch shape at the diamond Schottky contact. This Schottky contact inhomogeneity was found to increase the reverse current effectively even though the ∅blow low area is smaller because the reverse current in TE mode flows preferentially through ∅blow low patches. The current transport mode changed from TE to TFE when the maximum electric field was >1MV cm-1, which indicates that a strong electric field concentration exists at the Schottky electrode fringe. When the high reverse voltage was biased, a sudden current increase occurred, followed by a permanent increase of reverse current, indicating that mid-gap defects were formed at the interface. These results indicate that reverse current and electric-field breakdown have different origins. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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