| Autor: |
Keisuke Ohdaira, Trinh Thi Cham, Hideki Matsumura |
| Zdroj: |
Japanese Journal of Applied Physics; Oct2017, Vol. 56 Issue 10, p1-1, 1p |
| Abstrakt: |
Silicon nitride (SiNx) films formed by catalytic chemical vapor deposition (Cat-CVD) and phosphorus (P)-doped layers formed by catalytic impurity doping (Cat-doping) are applied for the passivation of pyramid-shaped textured crystalline Si (c-Si) surfaces formed by anisotropic etching in alkaline solution. Lower surface recombination velocities (SRVs) tend to be obtained when smaller pyramids are formed on c-Si surfaces. P Cat-doping is effective for reducing the SRV of textured c-Si surfaces as in the case of flat c-Si surfaces. We realize SRVs of textured c-Si surfaces of ∼8.0 and ∼6.7 cm/s for only SiNx passivation and for the combination of SiNx and P Cat-doping, respectively. These structures also have high optical transparency and low Auger recombination loss, and are of great worth in application for the surface passivation of interdigitated back-contact c-Si solar cells. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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