| Autor: |
Bunkin, A., Kolosov, V., Papushina, T. |
| Zdroj: |
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Sep2017, Vol. 11 Issue 5, p1039-1041, 3p |
| Abstrakt: |
The results of transmission electron microscopy and metallographic investigation of the microstructure of FeGe single crystals are reported. The main defects revealed are edge dislocations, dislocation loops, and stacking faults located predominantly in close-packed crystallographic planes. The spatial distribution of structural defects is shown to correlate with the specific features of the growth technology. The dislocation density in the samples studied is about 10 cm and is almost constant in a wide pulling-rate range. Small amounts of doping elements (Co, Al, Sn) do not significantly change the microstructure, and thus high quality crystals can be obtained after corresponding correction of the growth parameters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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