| Autor: |
Yang, Shi, Nutor, Raymond, Chen, Zi, Zheng, Hao, Wu, Hai, Si, Jian |
| Předmět: |
|
| Zdroj: |
Journal of Electronic Materials; Nov2017, Vol. 46 Issue 11, p6662-6668, 7p, 1 Black and White Photograph, 1 Chart, 3 Graphs |
| Abstrakt: |
We investigated the effect of NaCl doping on the thermoelectric properties of p-type SnNaSeCl ( x = 0, 0.005, 0.01, 0.02, 0.03 and 0.04) prepared by a method which combines rapid induction melting and rapid hot pressing. After introducing the NaCl into the SnSe system, the carrier concentration of SnSe is significantly increased from ∼4.55 × 10 cm to ∼3.95 × 10 cm at 300 K. An electrical conductivity of ∼102.5 S cm was obtained at 473 K by addition of 2 mol.% NaCl. It was found that Cl was effective in reducing the thermal conductivity by inducing abundant defects. A maximum ZT value of 0.84 was achieved in the NaSnSeCl sample at 810 K. This suggests that doping with NaCl is a facile and cost-effective method in optimizing the thermoelectric properties of SnSe materials. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink