| Autor: |
Nurulain, D., Musa, F. A. S., Isa, M. Mohamad, Ahmad, N., Kasjoo, S.R. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2017, Vol. 1885 Issue 1, p1-8, 8p, 9 Diagrams, 1 Chart |
| Abstrakt: |
A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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