| Autor: |
Kolodeznyi, Evgenii S., Novikov, Innokenty I., Babichev, Andrey V., Kurochkin, Alexander S., Gladyshev, Andrey G., Karachinsky, Leonid Ya., Gadzhiev, Idris M., Buyalo, Mikhail S., Usikova, Anna A., Egorov, Anton Yu., Bougrov, Vladislav E. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2017, Vol. 1874 Issue 1, p1-4, 4p, 1 Diagram, 2 Graphs |
| Abstrakt: |
We have fabricated passive mode-locked laser diode based on strained InGaAlAs/InGaAs/InP heterostructure with emission wavelength 1550 nm. The laser have demonstrated following characteristics i.e. threshold current was 0.36 A, optical emission power was 12 mW, optical pulse repetition rate was 9.84 GHz with ~ 8 ps pulse duration time at half-height. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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