Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5 (GST).

Autor: Harmgarth, Nicole, Zörner, Florian, Liebing, Phil, Burte, Edmund P., Silinskas, Mindaugas, Engelhardt, Felix, Edelmann, Frank T.
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Zdroj: Zeitschrift für Anorganische und Allgemeine Chemie; 10/4/2017, Vol. 643 Issue 18, p1150-1166, 17p
Abstrakt: review provides an overview of the precursor chemistry that has been developed around the phase-change material germaniumantimony- telluride, Ge2Sb2Te5 (GST). Thin films of GST can be deposited by employing either chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques. In both cases, the successof the layer deposition crucially depends on the proper choice of suitable molecular precursors. Previously reported processes mainly relied on simple alkoxides, alkyls, amides and halides of germanium, antimony, and tellurium. More sophisticated precursor design provided a number of promising new aziridinides and guanidinates [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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