| Autor: |
Jinhui Gong, Shitao Liu, Yuandan He, Xingcan Feng, Xuefeng Xia, Zhijue Quan, Li Wang |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/18/2017, Vol. 111 Issue 12, p122103-1-122103-4, 4p, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
A GaN/CH3NH3PbBr3 heterojunction was fabricated by depositing a GaN thin layer on a CH3NH3PbBr3 single crystal by plasma enhanced atomic layer deposition. The band alignment of the GaN/CH3NH3PbBr3 heterojunction was studied by x-ray photoelectron spectroscopy. The valance band offset (VBO) is directly determined to be 0.13 ± 0.08 eV. The conduction band offset is deduced from the VBO and the band gaps, which turned out to be 1.39 ± 0.12 eV. Thus, the band alignment of the GaN/CH3NH3PbBr3 heterojunction is determined to be type-I. These results show that GaN is a promising material for carrier confinement in halide perovskite based light emitting devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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