| Autor: |
Feng, M., Cheng-Han Wu, Wu, M. K., Chao-Hsin Wu, Holonyak Jr., N. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/18/2017, Vol. 111 Issue 12, p121106-1-121106-4, 4p, 4 Graphs |
| Abstrakt: |
Optical resonance in a semiconductor laser is a major limitation in high speed data communications, resulting in bit error rate degradation and requiring additional power consuming error-correction circuits to counter these effects. In this work, we report the microwave bandwidth measurement of a vertical cavity transistor laser with an oxide-confined aperture of 4.7 x 5.4 μm2 and demonstrate a 3 dB bandwidth of 11GHz resonance-free optical response via base-current or collector-voltage modulation. The emission spectra exhibit single-mode operation around 970 nm with a narrow line-width of Δλ~0.23 Å (cavity Q of 42 216). The resonance-free optical response is explained by the absence of carrier “accumulating” due to the fast base electron-hole recombination lifetimes and a gradient in the minority carrier charge in the transistor active mode. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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