Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures.

Autor: Pavlov, A., Pavlov, V., Slapovskiy, D., Arutyunyan, S., Fedorov, Yu., Mal'tsev, P.
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Zdroj: Russian Microelectronics; Sep2017, Vol. 46 Issue 5, p316-322, 7p
Abstrakt: A microwave field-effect transistor with nonalloyed ohmic contacts is fabricated using the technique of regrowing a heavily doped region under the contact metallization by molecular beam epitaxy through a preliminarily formed dielectric mask. The fabricated field-effect transistor with a gate length of 0.18 µm and a total width of 100 µm has a current-amplification cutoff frequency of 66 GHz and ohmic contact resistivity of 0.15-0.18 Ω mm. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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