| Autor: |
Agata Bojarska, Grzegorz Muzioł, Czesław Skierbiszewski, Ewa Grzanka, Przemysław Wiśniewski, Irina Makarowa, Robert Czernecki, Tadek Suski, Piotr Perlin |
| Zdroj: |
Applied Physics Express; Sep2017, Vol. 10 Issue 9, p1-1, 1p |
| Abstrakt: |
We demonstrate the influence of the operation current density and temperature on the degradation rate of InGaN laser diodes grown via metalorganic vapor-phase epitaxy (MOVPE) and plasma-assisted molecular beam epitaxy (PAMBE). The degradation rate of the MOVPE devices shows an exponential dependence on the temperature, with an activation energy of 0.38–0.43 eV, and a linear dependence on the operating current density. In comparison, the MBE-grown lasers exhibit a higher activation energy, on the order of 1 eV, and typically a lower degradation rate, resulting in a service time exceeding 50,000 h. We suggest that this difference may be related to the lower concentration of H in the Mg-doped MBE-grown GaN. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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