| Autor: |
Li, Zhen, Yadav, Satyesh, Chen, Youxing, Li, Nan, Liu, Xiang-Yang, Wang, Jian, Zhang, Shixiong, Baldwin, Jon Kevin, Misra, Amit, Mara, Nathan |
| Předmět: |
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| Zdroj: |
Materials Research Letters; Nov2017, Vol. 5 Issue 6, p426-432, 7p |
| Abstrakt: |
III–V and other binary octet semiconductors often take two phase forms—wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at room temperature. Here, taking AlN as a representative III–V compound, we investigate how to control the synthesized phase structure to either wz or zb phase by tuning the interfacial strain. By applyingin situmechanical tests at atomic scale in a transmission electron microscope, we observed the reversible phase transformation from zb to wz, and characterized the transition path—the collective glide of Shockley partials on every two {111} planes of the zb AlN. IMPACT STATEMENT Theinnovationof this paper is that a new type of plastic-deformation-driven reversible phase transition in AlN has been captured at atomic scale. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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