Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy.
| Autor: | K S Zhuravlev, D V Gulyaev, I A Aleksandrov, T V Malin, V G Mansurov, Yu G Galitsyn, K.A. Konfederatova, Yen-Chun Chen, Wen-Hao Chang |
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| Zdroj: | Journal of Physics: Conference Series; 2017, Vol. 864 Issue 1, p1-1, 1p |
| Databáze: | Complementary Index |
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