| Autor: |
Krammer, Anna, Magrez, Arnaud, Vitale, Wolfgang A., Mocny, Piotr, Jeanneret, Patrick, Guibert, Edouard, Whitlow, Harry J., Ionescu, Adrian M., Schüler, Andreas |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2017, Vol. 122 Issue 3, p1-6, 6p, 1 Color Photograph, 2 Charts, 3 Graphs |
| Abstrakt: |
Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (∼95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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