| Autor: |
Zecheng Liu, Masato Imamura, Atsuki Asano, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Osamu Oda, Makoto Sekine, Masaru Hori |
| Zdroj: |
Applied Physics Express; Aug2017, Vol. 10 Issue 8, p1-1, 1p |
| Abstrakt: |
Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl2 plasma emissions with wavelengths of 258 and 306 nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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